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學術信息

【航宇大講堂】Electronic State Modulation (ESM): A Newly Discovered Mechanism to Control the Magnetism of Porous Magnets

發布時間:2020-12-14瀏覽次數:2077發布者:顏士軒來源:南京航空航天大學

報告題目:ElectronicState Modulation (ESM): A Newly Discovered Mechanism to Control the Magnetismof Porous Magnets

報告人:張俊博士后(Tohoku University, Japan) 

報告時間:2020年12月16日(周三)晚上18:30

報告地點:騰訊會議ID:201538 273

主辦單位:機械結構力學及控制國家重點實驗室、航空學院、科協、國際合作與交流處

報告簡介:

The molecule-basedmagnet has attracted increased interests for potential applications as sensor,memory, chemical switch, and quantum computing. A material showing a reversiblemagnetic change in response to chemical stimuli (solvents or gases) is desirablein both fields of metal-organic frameworks/porous coordination polymers(MOFs/PCPs) and molecule-based magnets. The ability to change the intrinsicspin state in MOF will enable us to hugely tune its magnetic behavior in anunprecedented level, but this ultimate goal was left as a formidable challenge.So, the electronic state modulation (ESM) in an electronically-correlatedcoordination lattice can provide solution to achieving a drastic change intheir magnetism, which will be realized via the dynamic control ofintra-lattice electron transfer/charge transfer in response to externalstimuli.

In thispresentation, I will report a class of layered porous magnets, in which thevoid space exists between the layers for the guest accommodation. Such space hasbeen utilized as a powerful tool for ESM of porous magnets by chemical stimuli(solvents or gases), resulting in the switch of the magnetic properties.Several examples of reversible magnetic changes closely associated with ESM andstructural modifications realized by solvents or gases insertion/removalcycles, as well as their theoretical studies will be demonstrated. Through ESM,the magnetic change is not only huge and drastic but also suitable for all thechemical species. These results provide an insight into the molecular magnetsand further the development of stimuli-responsive materials.

報告人簡介:

張俊博士本科畢業于南京航空航天大學,在日本東北大學獲得碩士和博士學位后。目前就職于日本東北大學金屬材料研究所從事博士后研究。

張俊博士長期從事配位化學領域多孔分子磁體的研究。博士期間獨立發現了一種能夠有效調控分子材料磁性的新機制—電子狀態調制(Electronic State Modulation, ESM)—為多孔分子材料的磁性調控提供了新的有力手段。基于該項發現,相關成果分別發表在了Nature Chem., JACS, ACIE等期刊上。并有相關工作被選為“Very Important Paper (VIP)” 、“Frontispiece”、“Inside cover”、“Editor’s Highlights”等。曾任日本學術振興會特別研究員,獲得“國家優秀自費留學生獎學金”、國際配位化學會議“Rising star award”等獎項,并主持日本學術振興會青年科學基金等2項。

 


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