報告題目：The Theory of Self-Limited Growth of Graphene
報告人：Prof. Feng Ding (Ulsan National Institute of Science and Technology)
報告時間：2018年12月25日（星期二） 上午10:00-11:00
報告地點：明故宮校區9號樓506室
主辦單位：機械結構力學及控制國家重點實驗室、國際合作處、科協、航空宇航學院
報告內容簡介：
The concept of self-limited growth was broadly adopted to explain the chemical vapor deposition (CVD) growth of single layer graphene on Cu surface, while there are still many mysteries regarding this concept are not well understood, such as the saturated coverage of graphene is less than 100% in some cases. Based on our previous theoretical exploration on graphene CVD growth, we propose a new theoretical model to understand the above phenomenon.
By considering the balancing of the active carbon precursors, such as CH3 and CH2, on the catalyst surface and in the carrier gas, we have found out how the graphene coverage affects the concentration of precursors on the metal surface and therefore the graphene CVD growth. A theoretical model was proposed to describe the evolution of graphene during graphene CVD growth on a substrate surface. The numerical fitting shows a perfect match between our model and experimental data and the phase field theory (PFT) simulation developed based on the new model represent the final structure of CVD graphene domains on a metal substrate (Figure). This new theoretical model of graphene self-limited growth, except for a better understanding of the graphene growth mechanism, could also provide new insights into the fabrication of wafer scale graphene films.
報告人簡介：
Prof. Feng Ding obtained his Bs, Ms and PhD degrees from Huazhong University of Science and Technology, Fudan University and Nanjing University in 1993, 1996 and 2002, respectively. Then he was a Postdoctoral Research Fellow in Gothenburg University and Chalmers University in Sweden from 2003 to 2005. From 2005, he joined Rice University as a Research Scientist until the end of 2008. From 2009-2016, he worked in the Institute of Textile and Clothing of Hong Kong Polytechnic University as an Assistant Professor and Associate Professor (from 2013). From the beginning of 2017, he joined UNIST as a Distinguished Professor and the IBS-CMCM as a group leader.
Prof. Ding’s research group’s research interests mainly focus on the computational method development, theoretical exploration of various carbon materials and 2D materials, especially on their formation mechanism, the kinetics of their nucleation, growth and etching. Prof. Ding has published more than 200 SCI papers in leading journals of natural science, with ~ 30 in Science, Nature serious journals, PNAS, Sci Adv., PRL, JACS, ACIE. These publications were cited by > 7200 times (SCI) and his personal h-index is 49.
